All MOSFET. SWF5N30D Datasheet

 

SWF5N30D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWF5N30D
   Marking Code: SW5N30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F

 SWF5N30D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWF5N30D Datasheet (PDF)

 ..1. Size:866K  samwin
 swi5n30d swf5n30d.pdf

SWF5N30D SWF5N30D

SW5N30D N-channel Enhanced mode TO-251/TO-220F MOSFET Features TO-251 TO-220F BVDSS : 300V High ruggedness ID : 5 A Low RDS(ON) (Typ 0.76)@VGS=10V RDS(ON) : 0.76 Low Gate Charge (Typ 12nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:DC-DC,LED 1 1. Gate 2. Drain 3. Source 3 General Descriptio

 9.1. Size:780K  samwin
 swf5n60d swmn5n60d.pdf

SWF5N30D SWF5N30D

SW5N60D N-channel Enhanced mode TO-220F/TO-220SF MOSFET Features TO-220F TO-220SF BVDSS : 600V ID : 5A High ruggedness Low RDS(ON) (Typ1.9 )@VGS=10V RDS(ON) : 1.9 Low Gate Charge (Typ17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application:DC-DC,LED 1 1. Gate 2. Drain 3. Source 3 General Description

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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