SWF830D1 Specs and Replacement

Type Designator: SWF830D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm

Package: TO220F

SWF830D1 substitution

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SWF830D1 datasheet

 ..1. Size:1198K  samwin
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SWF830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS 500V Features ID 5A High ruggedness RDS(ON) 1.33 Low RDS(ON) (Typ 1.33 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application DC-DC LED PC 1 1... See More ⇒

Detailed specifications: SWF6N90D, SWF740D, SWF7N60K, SWF7N65DD, SWF7N65K, SWF7N65K2, SWF7N65M, SWF7N70K, IRF1407, SWF8N60D, SWF8N65D, SWF8N70K, SWF8N80K, SWF9N50D, SWH040R03VLT, SWH045R02VT, SWH065R03VLT

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs