All MOSFET. SWF9N50D Datasheet

 

SWF9N50D Datasheet and Replacement


   Type Designator: SWF9N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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SWF9N50D Datasheet (PDF)

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SWF9N50D

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS : 500V ID : 9A High ruggedness Low RDS(ON) (Typ 0.68)@VGS=10V RDS(ON) : 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application: DC-DCLEDPC 3 3 3 1. Gate 2. Drain 3. Source

Datasheet: SWF7N65K2 , SWF7N65M , SWF7N70K , SWF830D1 , SWF8N60D , SWF8N65D , SWF8N70K , SWF8N80K , IRFZ46N , SWH040R03VLT , SWH045R02VT , SWH065R03VLT , SWH110R03VT , SWH160R02VT , SWHA018R03VLT , SWHA020R03VLT , SWHA026R03VT .

History: IPP037N08N3 | NCEP045N10F

Keywords - SWF9N50D MOSFET datasheet

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