SWF9N50D Specs and Replacement

Type Designator: SWF9N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

SWF9N50D substitution

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SWF9N50D datasheet

 ..1. Size:1249K  samwin
 swf9n50d swp9n50d swd9n50d.pdf pdf_icon

SWF9N50D

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS 500V ID 9A High ruggedness Low RDS(ON) (Typ 0.68 )@VGS=10V RDS(ON) 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application DC-DC LED PC 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒

Detailed specifications: SWF7N65K2, SWF7N65M, SWF7N70K, SWF830D1, SWF8N60D, SWF8N65D, SWF8N70K, SWF8N80K, SI2302, SWH040R03VLT, SWH045R02VT, SWH065R03VLT, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT, SWHA026R03VT

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