All MOSFET. SWH040R03VLT Datasheet

 

SWH040R03VLT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWH040R03VLT
   Marking Code: 040R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 59 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: DFN3X3

 SWH040R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWH040R03VLT Datasheet (PDF)

 ..1. Size:734K  samwin
 swh040r03vlt.pdf

SWH040R03VLT SWH040R03VLT

SW040R03VLTFeaturesN-channel Enhanced mode DFN3*3 MOSFET High ruggednessBVDSS : 30VDFN3*3 Low RDS(ON) (Typ 5.5m)@VGS=4.5V(Typ 4.0m)@VGS=10V ID : 65A18 Low Gate Charge (Typ 59nC)RDS(ON) : 5.5m@VGS=4.5V2 7 Improved dv/dt Capability 63 100% Avalanche Tested5 4.0m@VGS=10V4 Application:Synchronous Rectification,DLi Battery Prote

 9.1. Size:925K  samwin
 swh045r02vt.pdf

SWH040R03VLT SWH040R03VLT

SW045R02VTN-channel Enhanced mode DFN3*3 MOSFETFeaturesDFN3*3BVDSS : 20V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=2.5VID : 20A18Low RDS(ON) (Typ 3.7m)@VGS=4.5V2 7RDS(ON) : 4.6m@VGS=2.5VLow RDS(ON) (Typ 3.3m)@VGS=10V635 Low Gate Charge (Typ 50nC) 43.7m@VGS=4.5V Improved dv/dt Capability 3.3m@VGS=10V 100% Avalanche Teste

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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