SWH040R03VLT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWH040R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 335 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: DFN3X3
SWH040R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWH040R03VLT Datasheet (PDF)
swh040r03vlt.pdf
SW040R03VLTFeaturesN-channel Enhanced mode DFN3*3 MOSFET High ruggednessBVDSS : 30VDFN3*3 Low RDS(ON) (Typ 5.5m)@VGS=4.5V(Typ 4.0m)@VGS=10V ID : 65A18 Low Gate Charge (Typ 59nC)RDS(ON) : 5.5m@VGS=4.5V2 7 Improved dv/dt Capability 63 100% Avalanche Tested5 4.0m@VGS=10V4 Application:Synchronous Rectification,DLi Battery Prote
swh045r02vt.pdf
SW045R02VTN-channel Enhanced mode DFN3*3 MOSFETFeaturesDFN3*3BVDSS : 20V High ruggedness Low RDS(ON) (Typ 4.6m)@VGS=2.5VID : 20A18Low RDS(ON) (Typ 3.7m)@VGS=4.5V2 7RDS(ON) : 4.6m@VGS=2.5VLow RDS(ON) (Typ 3.3m)@VGS=10V635 Low Gate Charge (Typ 50nC) 43.7m@VGS=4.5V Improved dv/dt Capability 3.3m@VGS=10V 100% Avalanche Teste
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
