All MOSFET. SWH065R03VLT Datasheet

 

SWH065R03VLT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWH065R03VLT
   Marking Code: 065R03VLT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: DFN3X3

 SWH065R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWH065R03VLT Datasheet (PDF)

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 swh065r03vlt.pdf

SWH065R03VLT SWH065R03VLT

SW065R03VLTN-channel Enhanced mode DFN3*3 MOSFETFeaturesDFN3*3 BVDSS : 30V High ruggedness Low RDS(ON) (Typ 8.7m)@VGS=4.5VID : 58A1 8(Typ 5.7m)@VGS=10V2 7RDS(ON) : 8.7m@VGS=4.5V6 Low Gate Charge (Typ 34nC) 354 Improved dv/dt Capability 5.7m@VGS=10V 100% Avalanche Tested Application:Synchronous Rectification,DLi Battery Protec

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