SWH065R03VLT Datasheet and Replacement
Type Designator: SWH065R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 198 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: DFN3X3
SWH065R03VLT substitution
SWH065R03VLT Datasheet (PDF)
swh065r03vlt.pdf

SW065R03VLTN-channel Enhanced mode DFN3*3 MOSFETFeaturesDFN3*3 BVDSS : 30V High ruggedness Low RDS(ON) (Typ 8.7m)@VGS=4.5VID : 58A1 8(Typ 5.7m)@VGS=10V2 7RDS(ON) : 8.7m@VGS=4.5V6 Low Gate Charge (Typ 34nC) 354 Improved dv/dt Capability 5.7m@VGS=10V 100% Avalanche Tested Application:Synchronous Rectification,DLi Battery Protec
Datasheet: SWF830D1 , SWF8N60D , SWF8N65D , SWF8N70K , SWF8N80K , SWF9N50D , SWH040R03VLT , SWH045R02VT , 2N60 , SWH110R03VT , SWH160R02VT , SWHA018R03VLT , SWHA020R03VLT , SWHA026R03VT , SWHA056R68E7T , SWHA065R03VLT , SWHA069R06VT .
History: 10N80
Keywords - SWH065R03VLT MOSFET datasheet
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History: 10N80



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