SWH065R03VLT Specs and Replacement

Type Designator: SWH065R03VLT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: DFN3X3

SWH065R03VLT substitution

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SWH065R03VLT datasheet

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SWH065R03VLT

SW065R03VLT N-channel Enhanced mode DFN3*3 MOSFET Features DFN3*3 BVDSS 30V High ruggedness Low RDS(ON) (Typ 8.7m )@VGS=4.5V ID 58A 1 8 (Typ 5.7m )@VGS=10V 2 7 RDS(ON) 8.7m @VGS=4.5V 6 Low Gate Charge (Typ 34nC) 3 5 4 Improved dv/dt Capability 5.7m @VGS=10V 100% Avalanche Tested Application Synchronous Rectification, D Li Battery Protec... See More ⇒

Detailed specifications: SWF830D1, SWF8N60D, SWF8N65D, SWF8N70K, SWF8N80K, SWF9N50D, SWH040R03VLT, SWH045R02VT, 20N50, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT, SWHA026R03VT, SWHA056R68E7T, SWHA065R03VLT, SWHA069R06VT

Keywords - SWH065R03VLT MOSFET specs

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