SWH110R03VT Specs and Replacement

Type Designator: SWH110R03VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: DFN3X3

SWH110R03VT substitution

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SWH110R03VT datasheet

 ..1. Size:766K  samwin
 swh110r03vt.pdf pdf_icon

SWH110R03VT

SW110R03VT N-channel Enhanced mode DFN3*3 MOSFET Features BVDSS 30V DFN3*3 High ruggedness ID 11A Low RDS(ON) (Typ 13.9m )@VGS=4.5V 1 8 2 7 RDS(ON) 13.9m @VGS=4.5V Low RDS(ON) (Typ 9.9m )@VGS=10V 6 3 Low Gate Charge (Typ 24nC) 5 4 9.9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested D Application DC-DC ... See More ⇒

Detailed specifications: SWF8N60D, SWF8N65D, SWF8N70K, SWF8N80K, SWF9N50D, SWH040R03VLT, SWH045R02VT, SWH065R03VLT, IRF520, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT, SWHA026R03VT, SWHA056R68E7T, SWHA065R03VLT, SWHA069R06VT, SWHA106R95VS

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