SWH110R03VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWH110R03VT
Marking Code: SW110R03V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: DFN3X3
SWH110R03VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWH110R03VT Datasheet (PDF)
swh110r03vt.pdf
SW110R03VT N-channel Enhanced mode DFN3*3 MOSFET Features BVDSS : 30V DFN3*3 High ruggedness ID : 11A Low RDS(ON) (Typ 13.9m)@VGS=4.5V 1 8 2 7 RDS(ON) : 13.9m@VGS=4.5V Low RDS(ON) (Typ 9.9m)@VGS=10V 6 3 Low Gate Charge (Typ 24nC) 5 4 9.9m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested D Application:DC-DC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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