All MOSFET. SWH160R02VT Datasheet

 

SWH160R02VT Datasheet and Replacement


   Type Designator: SWH160R02VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: DFN3X3
 

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SWH160R02VT Datasheet (PDF)

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SWH160R02VT

SW160R02VT N-channel Enhanced mode DFN3*3 MOSFET Features BVDSS : 20V DFN3*3 High ruggedness Low RDS(ON) (Typ 12.3m)@VGS=2.5V ID : 16A 1 8 (Typ 9.4m)@VGS=4.5V 2 7 RDS(ON) : 12.3m@VGS=2.5V Low Gate Charge (Typ 15.4nC) 6 3 5 4 Improved dv/dt Capability 9.4m@VGS=4.5V 100% Avalanche Tested Application:DC-DC Converter, Inve

Datasheet: SWF8N65D , SWF8N70K , SWF8N80K , SWF9N50D , SWH040R03VLT , SWH045R02VT , SWH065R03VLT , SWH110R03VT , IRFB31N20D , SWHA018R03VLT , SWHA020R03VLT , SWHA026R03VT , SWHA056R68E7T , SWHA065R03VLT , SWHA069R06VT , SWHA106R95VS , SWHA110R06VT .

History: 2N6659-2 | PJZ6NA90 | XP161 | 2SK3277 | 2N6568 | NTLUS4C12N | SSF60R260S2

Keywords - SWH160R02VT MOSFET datasheet

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