All MOSFET. SWH160R02VT Datasheet

 

SWH160R02VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWH160R02VT
   Marking Code: SW160R02V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.4 nC
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: DFN3X3

 SWH160R02VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWH160R02VT Datasheet (PDF)

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 swh160r02vt.pdf

SWH160R02VT SWH160R02VT

SW160R02VT N-channel Enhanced mode DFN3*3 MOSFET Features BVDSS : 20V DFN3*3 High ruggedness Low RDS(ON) (Typ 12.3m)@VGS=2.5V ID : 16A 1 8 (Typ 9.4m)@VGS=4.5V 2 7 RDS(ON) : 12.3m@VGS=2.5V Low Gate Charge (Typ 15.4nC) 6 3 5 4 Improved dv/dt Capability 9.4m@VGS=4.5V 100% Avalanche Tested Application:DC-DC Converter, Inve

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History: BUK9275-100A

 

 
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