All MOSFET. SWH160R02VT Datasheet

 

SWH160R02VT Datasheet and Replacement


   Type Designator: SWH160R02VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
   Package: DFN3X3
      - MOSFET Cross-Reference Search

 

SWH160R02VT Datasheet (PDF)

 ..1. Size:754K  samwin
 swh160r02vt.pdf pdf_icon

SWH160R02VT

SW160R02VT N-channel Enhanced mode DFN3*3 MOSFET Features BVDSS : 20V DFN3*3 High ruggedness Low RDS(ON) (Typ 12.3m)@VGS=2.5V ID : 16A 1 8 (Typ 9.4m)@VGS=4.5V 2 7 RDS(ON) : 12.3m@VGS=2.5V Low Gate Charge (Typ 15.4nC) 6 3 5 4 Improved dv/dt Capability 9.4m@VGS=4.5V 100% Avalanche Tested Application:DC-DC Converter, Inve

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTMFS4C06N | HLML6401 | SQ4940AEY | SSH6N55 | CED06N7 | SI8404DB | AP85T03GH-HF

Keywords - SWH160R02VT MOSFET datasheet

 SWH160R02VT cross reference
 SWH160R02VT equivalent finder
 SWH160R02VT lookup
 SWH160R02VT substitution
 SWH160R02VT replacement

 

 
Back to Top

 


 
.