All MOSFET. SWHA35N10V Datasheet

 

SWHA35N10V Datasheet and Replacement


   Type Designator: SWHA35N10V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 226 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN5X6
 

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SWHA35N10V Datasheet (PDF)

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SWHA35N10V

SW35N10V N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 100V High ruggedness ID : 35A 1 8 Low RDS(ON) (Typ 12.4m)@VGS=4.5V 2 7 (Typ 11.6m)@VGS=10V RDS(ON) : 12.4m@VGS=4.5V 6 3 Low Gate Charge (Typ 117nC) 5 4 11.6m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested D Application:Synchronous Rect

Datasheet: SWHA065R03VLT , SWHA069R06VT , SWHA106R95VS , SWHA110R06VT , SWHA120R45VT , SWHA130R06VT , SWHA13N65K2 , SWHA15N04V , STP65NF06 , SWHA40N06V , SWHA50P03 , SWHA60N04V , SWHA7N65M , SWHA80N06V1 , SWHA80N08V1 , SWHC13N65K2 , SWI051R08ES .

History: NCEP048N85D | NCE3008N | SFP026N100C3 | SI7302DN | NCE40H10K | IRLU3714ZPBF | SFP070N80C2

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