All MOSFET. SWHA35N10V Datasheet

 

SWHA35N10V MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWHA35N10V
   Marking Code: SW35N10V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 226 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN5X6

 SWHA35N10V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWHA35N10V Datasheet (PDF)

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 swha35n10v.pdf

SWHA35N10V SWHA35N10V

SW35N10V N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 100V High ruggedness ID : 35A 1 8 Low RDS(ON) (Typ 12.4m)@VGS=4.5V 2 7 (Typ 11.6m)@VGS=10V RDS(ON) : 12.4m@VGS=4.5V 6 3 Low Gate Charge (Typ 117nC) 5 4 11.6m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested D Application:Synchronous Rect

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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