SWHA50P03 Specs and Replacement
Type Designator: SWHA50P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 506 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
Package: DFN5X6
SWHA50P03 substitution
- MOSFET ⓘ Cross-Reference Search
SWHA50P03 datasheet
swha50p03.pdf
SW50P03 P-channel Enhanced mode DFN5*6 MOSFET Features BVDSS -30V DFN5*6 High ruggedness ID -13A Low RDS(ON) (Typ 11.3m )@VGS=-4.5V 1 8 Low RDS(ON) (Typ 7.8m )@VGS=-10V RDS(ON) 11.3m @VGS=-4.5V 2 7 Low Gate Charge (Typ 68nC) 6 3 5 4 7.8m @VGS=-10V Improved dv/dt Capability 100% Avalanche Tested D Application Ada... See More ⇒
Detailed specifications: SWHA106R95VS, SWHA110R06VT, SWHA120R45VT, SWHA130R06VT, SWHA13N65K2, SWHA15N04V, SWHA35N10V, SWHA40N06V, IRLB3034, SWHA60N04V, SWHA7N65M, SWHA80N06V1, SWHA80N08V1, SWHC13N65K2, SWI051R08ES, SWI055R03VT, SWI069R06VT
Keywords - SWHA50P03 MOSFET specs
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