All MOSFET. SWHA60N04V Datasheet

 

SWHA60N04V MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWHA60N04V
   Marking Code: SW60N04V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 127 nC
   trⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: DFN5X6

 SWHA60N04V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWHA60N04V Datasheet (PDF)

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 swha60n04v.pdf

SWHA60N04V SWHA60N04V

SW60N04V N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 40V High ruggedness Low RDS(ON) (Typ 2.9m)@VGS=4.5V ID : 60A 1 8 (Typ 2.3m)@VGS=10V 2 7 RDS(ON) : 2.9m@VGS=4.5V 6 3 Low Gate Charge (Typ 127nC) 5 4 Improved dv/dt Capability 2.3m@VGS=10V 100% Avalanche Tested Application:DC-DC Converter, Inverter, D(5

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