SWHA80N08V1 Specs and Replacement

Type Designator: SWHA80N08V1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 312 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: DFN5X6

SWHA80N08V1 substitution

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SWHA80N08V1 datasheet

 ..1. Size:825K  samwin
 swha80n08v1.pdf pdf_icon

SWHA80N08V1

SW80N08V1 N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS 80V DFN5*6 High ruggedness ID 11A Low RDS(ON) (Typ 9.9m )@VGS=4.5V 1 8 (Typ 8.9m )@VGS=10V RDS(ON) 9.9m @VGS=4.5V 2 7 Low Gate Charge (Typ 79nC) 6 3 5 8.9m @VGS=10V 4 Improved dv/dt Capability 100% Avalanche Tested Application Synchronous Rectification,... See More ⇒

 6.1. Size:718K  samwin
 swha80n06v1.pdf pdf_icon

SWHA80N08V1

SW80N06V1 N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 60V High ruggedness ID 14A Low RDS(ON) (Typ 6.6m )@VGS=4.5V 1 8 (Typ 5.4m )@VGS=10V 2 7 RDS(ON) 6.6m @VGS=4.5V 6 3 Low Gate Charge (Typ 94nC) 5 4 5.4m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested Application Synchronous Rectification, D... See More ⇒

Detailed specifications: SWHA13N65K2, SWHA15N04V, SWHA35N10V, SWHA40N06V, SWHA50P03, SWHA60N04V, SWHA7N65M, SWHA80N06V1, K2611, SWHC13N65K2, SWI051R08ES, SWI055R03VT, SWI069R06VT, SWI075R06ET, SWI085R06VS, SWI100R10VT, SWI110R06VT

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