SWHA80N08V1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SWHA80N08V1
Marking Code: SW80N08V1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 79 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 312 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
Package: DFN5X6
SWHA80N08V1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWHA80N08V1 Datasheet (PDF)
swha80n08v1.pdf
SW80N08V1 N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 80V DFN5*6 High ruggedness ID : 11A Low RDS(ON) (Typ 9.9m)@VGS=4.5V 1 8 (Typ 8.9m)@VGS=10V RDS(ON) : 9.9m @VGS=4.5V 2 7 Low Gate Charge (Typ 79nC) 6 3 5 8.9m @VGS=10V 4 Improved dv/dt Capability 100% Avalanche Tested Application:Synchronous Rectification,
swha80n06v1.pdf
SW80N06V1 N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS : 60V High ruggedness ID : 14A Low RDS(ON) (Typ 6.6m)@VGS=4.5V 1 8 (Typ 5.4m)@VGS=10V 2 7 RDS(ON) : 6.6m@VGS=4.5V 6 3 Low Gate Charge (Typ 94nC) 5 4 5.4m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested Application: Synchronous Rectification, D
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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