SWI075R06ET Specs and Replacement

Type Designator: SWI075R06ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 333 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm

Package: TO251

SWI075R06ET substitution

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SWI075R06ET datasheet

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 swi075r06et swd075r06et.pdf pdf_icon

SWI075R06ET

SW075R06ET N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 60V High ruggedness ID 65A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drai... See More ⇒

Detailed specifications: SWHA60N04V, SWHA7N65M, SWHA80N06V1, SWHA80N08V1, SWHC13N65K2, SWI051R08ES, SWI055R03VT, SWI069R06VT, AO4407A, SWI085R06VS, SWI100R10VT, SWI110R06VT, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT

Keywords - SWI075R06ET MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.