All MOSFET. SWI075R06ET Datasheet

 

SWI075R06ET MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI075R06ET
   Marking Code: SW075R06ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 333 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO251

 SWI075R06ET Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI075R06ET Datasheet (PDF)

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 swi075r06et swd075r06et.pdf

SWI075R06ET SWI075R06ET

SW075R06ETN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 60V High ruggednessID : 65A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification, 2233Li Battery Protect Board, Inverter11. Gate 2. Drai

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History: SVSP65R110SHD4TR

 

 
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