All MOSFET. SWI075R06ET Datasheet

 

SWI075R06ET Datasheet and Replacement


   Type Designator: SWI075R06ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 333 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO251
 

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SWI075R06ET Datasheet (PDF)

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SWI075R06ET

SW075R06ETN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 60V High ruggednessID : 65A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification, 2233Li Battery Protect Board, Inverter11. Gate 2. Drai

Datasheet: SWHA60N04V , SWHA7N65M , SWHA80N06V1 , SWHA80N08V1 , SWHC13N65K2 , SWI051R08ES , SWI055R03VT , SWI069R06VT , AO3407 , SWI085R06VS , SWI100R10VT , SWI110R06VT , SWI120R45VT , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , SWI160R12VT .

History: DMN4034SSS | APT12045L2VFRG | CMD5941 | FW206 | SWI085R06VS | FCMT125N65S3 | IRFB9N60APBF

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