SWI110R06VT Specs and Replacement

Type Designator: SWI110R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 218 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO251

SWI110R06VT substitution

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SWI110R06VT datasheet

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 swi110r06vt.pdf pdf_icon

SWI110R06VT

SW110R06VT N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 75A Low RDS(ON) (Typ 11m )@VGS=4.5V (Typ 10m )@VGS=10V RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 69nC) 10m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application Electronic Ballast, Motor Control, Synchronous Rectification... See More ⇒

Detailed specifications: SWHA80N08V1, SWHC13N65K2, SWI051R08ES, SWI055R03VT, SWI069R06VT, SWI075R06ET, SWI085R06VS, SWI100R10VT, AO4468, SWI120R45VT, SWI130R06VT, SWI13N60K2, SWI13N65K2, SWI160R12VT, SWI19N10, SWI1N55D, SWI1N60

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