All MOSFET. SWI110R06VT Datasheet

 

SWI110R06VT Datasheet and Replacement


   Type Designator: SWI110R06VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO251
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SWI110R06VT Datasheet (PDF)

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SWI110R06VT

SW110R06VTN-channel Enhanced mode TO-251 MOSFETFeaturesTO-251 BVDSS : 60V High ruggednessID : 75A Low RDS(ON) (Typ 11m)@VGS=4.5V(Typ 10m)@VGS=10VRDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 69nC)10m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 223 Application: Electronic Ballast, Motor Control, Synchronous Rectification

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFBF20 | LKK47-06C5 | TSM4424CS | CED4301 | AP04N70BI | IRFB3004GPBF | BRCS200P03DP

Keywords - SWI110R06VT MOSFET datasheet

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