All MOSFET. SWI1N55D Datasheet

 

SWI1N55D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI1N55D
   Marking Code: SW1N55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO251

 SWI1N55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI1N55D Datasheet (PDF)

 ..1. Size:643K  samwin
 swi1n55d.pdf

SWI1N55D SWI1N55D

SW1N55D N-channel Enhanced mode TO-251 MOSFET Features BVDSS : 550V TO-251 ID : 1A High ruggedness Low RDS(ON) (Typ 4.5)@VGS=10V RDS(ON) : 4.5 Low Gate Charge (Typ 7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:Charger, Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET

 9.1. Size:1087K  samwin
 swi1n60 swc1n60.pdf

SWI1N55D SWI1N55D

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS : 600V TO-251 TO-92 TO-251S ID : 1A High ruggedness Low RDS(ON) (Typ 6.6)@VGS=10V RDS(ON) : 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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