SWI2N60DC Specs and Replacement

Type Designator: SWI2N60DC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO251

SWI2N60DC substitution

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SWI2N60DC datasheet

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SWI2N60DC

SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET BVDSS 600V Features TO-252 TO-251 ID 2A High ruggedness RDS(ON) 3.9 Low RDS(ON) (Typ 3.9 )@VGS=10V Low Gate Charge (Typ9.5nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 2 1 3 2 Application Charger,Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Descripti... See More ⇒

Detailed specifications: SWI13N65K2, SWI160R12VT, SWI19N10, SWI1N55D, SWI1N60, SWI200R10VT, SWI20N20D, SWI230R45VT, IRF640, SWI4N60D, SWI4N60K, SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K, SWI50P03, SWI5N30D

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