All MOSFET. SWI2N60DC Datasheet

 

SWI2N60DC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWI2N60DC
   Marking Code: SW2N60DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO251

 SWI2N60DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWI2N60DC Datasheet (PDF)

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 swd2n60dc swi2n60dc.pdf

SWI2N60DC SWI2N60DC

SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET BVDSS :600V Features TO-252 TO-251 ID : 2A High ruggedness RDS(ON) : 3.9 Low RDS(ON) (Typ 3.9)@VGS=10V Low Gate Charge (Typ9.5nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 2 1 3 2 Application:Charger,Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Descripti

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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