All MOSFET. SWI2N60DC Datasheet

 

SWI2N60DC Datasheet and Replacement


   Type Designator: SWI2N60DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO251
 

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SWI2N60DC Datasheet (PDF)

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SWI2N60DC

SW2N60DC N-channel Enhanced mode TO-252/TO-251 MOSFET BVDSS :600V Features TO-252 TO-251 ID : 2A High ruggedness RDS(ON) : 3.9 Low RDS(ON) (Typ 3.9)@VGS=10V Low Gate Charge (Typ9.5nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 2 1 3 2 Application:Charger,Adaptor,LED 3 1 1. Gate 2. Drain 3. Source 3 General Descripti

Datasheet: SWI13N65K2 , SWI160R12VT , SWI19N10 , SWI1N55D , SWI1N60 , SWI200R10VT , SWI20N20D , SWI230R45VT , IRFZ44 , SWI4N60D , SWI4N60K , SWI4N65DB , SWI4N65DC , SWI4N65K , SWI4N70K , SWI50P03 , SWI5N30D .

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