SWI50P03 Specs and Replacement

Type Designator: SWI50P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 506 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO251

SWI50P03 substitution

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SWI50P03 datasheet

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SWI50P03

SW50P03 P-channel Enhanced mode TO-251 MOSFET Features BVDSS -30V TO-251 High ruggedness ID -85A Low RDS(ON) (Typ 12m )@VGS=-4.5V Low RDS(ON) (Typ 8.5m )@VGS=-10V RDS(ON) 12m @VGS=-4.5V Low Gate Charge (Typ 69nC) 8.5m @VGS=-10V Improved dv/dt Capability 100% Avalanche Tested 1 2 2 Application Adaptor Input Switch 3 ... See More ⇒

Detailed specifications: SWI230R45VT, SWI2N60DC, SWI4N60D, SWI4N60K, SWI4N65DB, SWI4N65DC, SWI4N65K, SWI4N70K, IRFB4227, SWI5N30D, SWI6N65K, SWI70N10V, SWI7N60K, SWI7N65K, SWI7N65K2, SWI7N70K, SWI80N04V

Keywords - SWI50P03 MOSFET specs

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