All MOSFET. SWI50P03 Datasheet

 

SWI50P03 Datasheet and Replacement


   Type Designator: SWI50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 506 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO251
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SWI50P03 Datasheet (PDF)

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SWI50P03

SW50P03 P-channel Enhanced mode TO-251 MOSFET Features BVDSS : -30V TO-251 High ruggedness ID : -85A Low RDS(ON) (Typ 12m)@VGS=-4.5V Low RDS(ON) (Typ 8.5m)@VGS=-10V RDS(ON) : 12m @VGS=-4.5V Low Gate Charge (Typ 69nC) 8.5m @VGS=-10V Improved dv/dt Capability 100% Avalanche Tested 1 2 2 Application: Adaptor Input Switch 3

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUK7105-40ATE | CS2837AND | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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