All MOSFET. SWI50P03 Datasheet

 

SWI50P03 Datasheet and Replacement


   Type Designator: SWI50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 506 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO251
 

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SWI50P03 Datasheet (PDF)

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SWI50P03

SW50P03 P-channel Enhanced mode TO-251 MOSFET Features BVDSS : -30V TO-251 High ruggedness ID : -85A Low RDS(ON) (Typ 12m)@VGS=-4.5V Low RDS(ON) (Typ 8.5m)@VGS=-10V RDS(ON) : 12m @VGS=-4.5V Low Gate Charge (Typ 69nC) 8.5m @VGS=-10V Improved dv/dt Capability 100% Avalanche Tested 1 2 2 Application: Adaptor Input Switch 3

Datasheet: SWI230R45VT , SWI2N60DC , SWI4N60D , SWI4N60K , SWI4N65DB , SWI4N65DC , SWI4N65K , SWI4N70K , IRF3710 , SWI5N30D , SWI6N65K , SWI70N10V , SWI7N60K , SWI7N65K , SWI7N65K2 , SWI7N70K , SWI80N04V .

History: TSM2N70CZ | FDT457N | MTB2P50ET4G | HFP2N65U | SQJ469EP | SQJ486EP | SFF80N20PUB

Keywords - SWI50P03 MOSFET datasheet

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