SWI50P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: SWI50P03
Marking Code: SW50P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 506 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO251
SWI50P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWI50P03 Datasheet (PDF)
swi50p03.pdf
SW50P03 P-channel Enhanced mode TO-251 MOSFET Features BVDSS : -30V TO-251 High ruggedness ID : -85A Low RDS(ON) (Typ 12m)@VGS=-4.5V Low RDS(ON) (Typ 8.5m)@VGS=-10V RDS(ON) : 12m @VGS=-4.5V Low Gate Charge (Typ 69nC) 8.5m @VGS=-10V Improved dv/dt Capability 100% Avalanche Tested 1 2 2 Application: Adaptor Input Switch 3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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