SWJ4N80D Specs and Replacement

Type Designator: SWJ4N80D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: TO262

SWJ4N80D substitution

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SWJ4N80D datasheet

 ..1. Size:1046K  samwin
 swf4n80d swn4n80d swd4n80d swj4n80d.pdf pdf_icon

SWJ4N80D

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFET Features TO-220F TO-251N TO-252 TO-262N BVDSS 800V High ruggedness ID 4A Low RDS(ON) (Typ 3.2 )@VGS=10V RDS(ON) 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 1 2 2 Application Adaptor, LED, 2 2 3 3 3 3 Industrial Power 1 1. Gate 2... See More ⇒

Detailed specifications: SWI80N06V1, SWI80N08V1, SWI830D1, SWI8N65D, SWI8N80K, SWJ10N65D, SWJ13N65K2, SWJ20N65K, IRF4905, SWJ5N70K, SWJ6N90D, SWJ7N65DA, SWJ7N70K, SWJ8N90KU, SWK028P04, SWK028P04VT, SWK083R06VLS

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