All MOSFET. SWJ4N80D Datasheet

 

SWJ4N80D Datasheet and Replacement


   Type Designator: SWJ4N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO262
 

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SWJ4N80D Datasheet (PDF)

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SWJ4N80D

SW4N80DN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFETFeaturesTO-220F TO-251N TO-252 TO-262NBVDSS : 800V High ruggednessID : 4A Low RDS(ON) (Typ 3.2)@VGS=10VRDS(ON) : 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 21 11 12 2 Application:Adaptor, LED, 2 23 33 3Industrial Power11. Gate 2

Datasheet: SWI80N06V1 , SWI80N08V1 , SWI830D1 , SWI8N65D , SWI8N80K , SWJ10N65D , SWJ13N65K2 , SWJ20N65K , IRF4905 , SWJ5N70K , SWJ6N90D , SWJ7N65DA , SWJ7N70K , SWJ8N90KU , SWK028P04 , SWK028P04VT , SWK083R06VLS .

History: SEFN9140

Keywords - SWJ4N80D MOSFET datasheet

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