All MOSFET. SWK028P04VT Datasheet

 

SWK028P04VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWK028P04VT
   Marking Code: SW028P04VT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8

 SWK028P04VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWK028P04VT Datasheet (PDF)

 ..1. Size:772K  samwin
 swk028p04vt.pdf

SWK028P04VT SWK028P04VT

SW028P04VTP-channel Enhanced mode SOP-8 MOSFETFeaturesSOP-8 BVDSS : -40V High ruggedness Low RDS(ON) (Typ 27m)@VGS=-4.5V ID : -7.5A56(Typ 21m)@VGS=-10V7RDS(ON) : 27m @VGS=-4.5V8 Low Gate Charge (Typ 60nC)4 Improved dv/dt Capability 21m @VGS=-10V3 100% Avalanche Tested 21 Application: DC-DC Converter, DMotor Control4. Gate 5

 5.1. Size:743K  samwin
 swk028p04.pdf

SWK028P04VT SWK028P04VT

SW028P04 P-channel Enhanced mode SOP-8 MOSFET Features SOP-8 BVDSS : -40V High ruggedness Low RDS(ON) (Typ 23m)@VGS=-4.5V D ID : -7.5A D (Typ 19m)@VGS=-10V D RDS(ON) : 23m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S S Improved dv/dt Capability 19m @VGS=-10V S 100% Avalanche Tested G(4) D(5,6,7,8) S(1,2,3) Application:

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top