All MOSFET. SWK110R06VT Datasheet

 

SWK110R06VT Datasheet and Replacement


   Type Designator: SWK110R06VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

 SWK110R06VT substitution

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SWK110R06VT Datasheet (PDF)

 ..1. Size:810K  samwin
 swk110r06vt swha110r06vt.pdf pdf_icon

SWK110R06VT

SW110R06VTN-channel Enhanced mode SOP8/DFN5*6 MOSFETFeaturesSOP8 DFN5*6 BVDSS : 60V High ruggednessID : 11A1 85 Low RDS(ON) (Typ 11m)@VGS=4.5V6 2 7(Typ 10m)@VGS=10V 76 RDS(ON) : 11m@VGS=4.5V384 5 Low Gate Charge (Typ 69nC)410m@VGS=10V3 Improved dv/dt Capability 2 100% Avalanche Tested 1D Application: Electronic Ballast,

 6.1. Size:683K  samwin
 swk110r03vt.pdf pdf_icon

SWK110R06VT

SW110R03VT N-channel Enhanced mode SOP8 MOSFET Features BVDSS : 30V SOP8 High ruggedness 5 ID : 11A 6 Low RDS(ON) (Typ 9.8m)@VGS=4.5V 7 8 RDS(ON) : 9.8m@VGS=4.5V Low RDS(ON) (Typ 8.3m)@VGS=10V 4 Low Gate Charge (Typ 24nC) 3 8.3m@VGS=10V Improved dv/dt Capability 2 1 100% Avalanche Tested D Application:DC-DC

Datasheet: SWJ7N70K , SWJ8N90KU , SWK028P04 , SWK028P04VT , SWK083R06VLS , SWK083R06VS , SWK083R06VSM , SWK110R03VT , 4435 , SWK120R45VT , SWK130R06VT , SWK15N04V , SWK15N06V , SWK200R10VT , SWK230R45VT , SWK30N04V , SWL2N70D .

History: IRF5805PBF | IXTT140N10P | SSF2341E | STD35NF3LLT4 | IPP60R299CP | ME2326A-G | AP9973GM

Keywords - SWK110R06VT MOSFET datasheet

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