SWK110R06VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWK110R06VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 218 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
SWK110R06VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWK110R06VT Datasheet (PDF)
swk110r06vt swha110r06vt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW110R06VTN-channel Enhanced mode SOP8/DFN5*6 MOSFETFeaturesSOP8 DFN5*6 BVDSS : 60V High ruggednessID : 11A1 85 Low RDS(ON) (Typ 11m)@VGS=4.5V6 2 7(Typ 10m)@VGS=10V 76 RDS(ON) : 11m@VGS=4.5V384 5 Low Gate Charge (Typ 69nC)410m@VGS=10V3 Improved dv/dt Capability 2 100% Avalanche Tested 1D Application: Electronic Ballast,
swk110r03vt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW110R03VT N-channel Enhanced mode SOP8 MOSFET Features BVDSS : 30V SOP8 High ruggedness 5 ID : 11A 6 Low RDS(ON) (Typ 9.8m)@VGS=4.5V 7 8 RDS(ON) : 9.8m@VGS=4.5V Low RDS(ON) (Typ 8.3m)@VGS=10V 4 Low Gate Charge (Typ 24nC) 3 8.3m@VGS=10V Improved dv/dt Capability 2 1 100% Avalanche Tested D Application:DC-DC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .