SWK130R06VT Specs and Replacement

Type Designator: SWK130R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

SWK130R06VT substitution

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SWK130R06VT datasheet

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 swk130r06vt swha130r06vt swi130r06vt.pdf pdf_icon

SWK130R06VT

SW130R06VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness SOP-8 DFN5*6 TO-251 BVDSS 60V Low RDS(ON) (Typ 14m )@VGS=4.5V (Typ 12m )@VGS=10V 5 ID 58A 6 Low Gate Charge (Typ 55nC) 1 8 7 8 2 7 Improved dv/dt Capability RDS(ON) 14m @ VGS=4.5V 4 6 3 3 100% Avalanche Tested 4 5 2 12m @ VGS=1... See More ⇒

Detailed specifications: SWK028P04, SWK028P04VT, SWK083R06VLS, SWK083R06VS, SWK083R06VSM, SWK110R03VT, SWK110R06VT, SWK120R45VT, IRFB3607, SWK15N04V, SWK15N06V, SWK200R10VT, SWK230R45VT, SWK30N04V, SWL2N70D, SWMI4N60D, SWMN10N65D

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