SWK130R06VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWK130R06VT
Marking Code: SW130R06VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
SWK130R06VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWK130R06VT Datasheet (PDF)
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swk130r06vt swha130r06vt swi130r06vt.pdf
SW130R06VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness SOP-8 DFN5*6 TO-251 BVDSS : 60V Low RDS(ON) (Typ 14m)@VGS=4.5V (Typ 12m)@VGS=10V 5 ID : 58A 6 Low Gate Charge (Typ 55nC) 1 8 7 8 2 7 Improved dv/dt Capability RDS(ON) : 14m@ VGS=4.5V 4 6 3 3 100% Avalanche Tested 4 5 2 12m@ VGS=1
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