All MOSFET. SWK200R10VT Datasheet

 

SWK200R10VT Datasheet and Replacement


   Type Designator: SWK200R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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SWK200R10VT Datasheet (PDF)

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SWK200R10VT

SW200R10VT N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 100V High ruggedness 5 ID : 7A 6 Low RDS(ON) (Typ 20.6m)@VGS=4.5V 7 RDS(ON) : 20.6m@VGS=4.5V (Typ 20m)@VGS=10V 8 4 Low Gate Charge (Typ 89nC) 3 20m@VGS=10V 2 Improved dv/dt Capability 1 100% Avalanche Tested D Application: Synchronous Rectificat

Datasheet: SWK083R06VS , SWK083R06VSM , SWK110R03VT , SWK110R06VT , SWK120R45VT , SWK130R06VT , SWK15N04V , SWK15N06V , 5N65 , SWK230R45VT , SWK30N04V , SWL2N70D , SWMI4N60D , SWMN10N65D , SWMN10N65K , SWMN12N65D , SWMN12N65DA .

History: AP65SL130AR | SPB100N03S2 | FDB6021P | IXTK140N30P | IXTH96P085T | SSM6J412TU | MRF5007R1

Keywords - SWK200R10VT MOSFET datasheet

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