SWK200R10VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWK200R10VT
Marking Code: SW200R10VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 89 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
SWK200R10VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWK200R10VT Datasheet (PDF)
..1. Size:729K samwin
swk200r10vt.pdf
swk200r10vt.pdf
SW200R10VT N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 100V High ruggedness 5 ID : 7A 6 Low RDS(ON) (Typ 20.6m)@VGS=4.5V 7 RDS(ON) : 20.6m@VGS=4.5V (Typ 20m)@VGS=10V 8 4 Low Gate Charge (Typ 89nC) 3 20m@VGS=10V 2 Improved dv/dt Capability 1 100% Avalanche Tested D Application: Synchronous Rectificat
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
