All MOSFET. SWK200R10VT Datasheet

 

SWK200R10VT Datasheet and Replacement


   Type Designator: SWK200R10VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
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SWK200R10VT Datasheet (PDF)

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SWK200R10VT

SW200R10VT N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 100V High ruggedness 5 ID : 7A 6 Low RDS(ON) (Typ 20.6m)@VGS=4.5V 7 RDS(ON) : 20.6m@VGS=4.5V (Typ 20m)@VGS=10V 8 4 Low Gate Charge (Typ 89nC) 3 20m@VGS=10V 2 Improved dv/dt Capability 1 100% Avalanche Tested D Application: Synchronous Rectificat

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History: ST75N75 | HLML6401 | STP200NF04 | NVATS68301PZ | FQN1N50CTA | AP8N3R5CMT | AP85T03GH-HF

Keywords - SWK200R10VT MOSFET datasheet

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