SWK200R10VT Specs and Replacement

Type Designator: SWK200R10VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

SWK200R10VT substitution

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SWK200R10VT datasheet

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 swk200r10vt.pdf pdf_icon

SWK200R10VT

SW200R10VT N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS 100V High ruggedness 5 ID 7A 6 Low RDS(ON) (Typ 20.6m )@VGS=4.5V 7 RDS(ON) 20.6m @VGS=4.5V (Typ 20m )@VGS=10V 8 4 Low Gate Charge (Typ 89nC) 3 20m @VGS=10V 2 Improved dv/dt Capability 1 100% Avalanche Tested D Application Synchronous Rectificat... See More ⇒

Detailed specifications: SWK083R06VS, SWK083R06VSM, SWK110R03VT, SWK110R06VT, SWK120R45VT, SWK130R06VT, SWK15N04V, SWK15N06V, CS150N03A8, SWK230R45VT, SWK30N04V, SWL2N70D, SWMI4N60D, SWMN10N65D, SWMN10N65K, SWMN12N65D, SWMN12N65DA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.