SWL2N70D Specs and Replacement

Type Designator: SWL2N70D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm

Package: TO126

SWL2N70D substitution

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SWL2N70D datasheet

 ..1. Size:1061K  samwin
 swn2n70d swd2n70d swl2n70d swf2n70d.pdf pdf_icon

SWL2N70D

SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 TO-126 ID 2A High ruggedness Low RDS(ON) (Typ 5 )@VGS=10V RDS(ON) 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application Charger,LED 3 3 3 3 1 1. Gate 2.... See More ⇒

Detailed specifications: SWK110R06VT, SWK120R45VT, SWK130R06VT, SWK15N04V, SWK15N06V, SWK200R10VT, SWK230R45VT, SWK30N04V, STP80NF70, SWMI4N60D, SWMN10N65D, SWMN10N65K, SWMN12N65D, SWMN12N65DA, SWMN15N50D, SWMN15N65J, SWMN4N65DD

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