All MOSFET. SWN2N65K Datasheet

 

SWN2N65K Datasheet and Replacement


   Type Designator: SWN2N65K
   Marking Code: SW2N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
      - MOSFET Cross-Reference Search

 

SWN2N65K Datasheet (PDF)

 ..1. Size:688K  samwin
 swn2n65k swd2n65k.pdf pdf_icon

SWN2N65K

SW2N65K N-channel Enhanced mode TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-252 TO-251N ID : 2A High ruggedness Low RDS(ON) (Typ 1.9)@VGS=10V RDS(ON) : 1.9 Low Gate Charge (Typ 7.8nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:Power Supply,LED Boost 1 3 3 3 1. Gate 2. Drain 3. Source General Descrip

 9.1. Size:1061K  samwin
 swn2n70d swd2n70d swl2n70d swf2n70d.pdf pdf_icon

SWN2N65K

SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS : 700V TO-220F TO-251N TO-252 TO-126 ID : 2A High ruggedness Low RDS(ON) (Typ 5)@VGS=10V RDS(ON) : 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application: Charger,LED 3 3 3 3 1 1. Gate 2.

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXFP4N100QM | APT4016SVFRG | ZXMC3A18DN8 | AP50T10GJ-HF

Keywords - SWN2N65K MOSFET datasheet

 SWN2N65K cross reference
 SWN2N65K equivalent finder
 SWN2N65K lookup
 SWN2N65K substitution
 SWN2N65K replacement

 

 
Back to Top

 


 
.