All MOSFET. SWN2N65K Datasheet

 

SWN2N65K Datasheet and Replacement


   Type Designator: SWN2N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
 

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SWN2N65K Datasheet (PDF)

 ..1. Size:688K  samwin
 swn2n65k swd2n65k.pdf pdf_icon

SWN2N65K

SW2N65K N-channel Enhanced mode TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-252 TO-251N ID : 2A High ruggedness Low RDS(ON) (Typ 1.9)@VGS=10V RDS(ON) : 1.9 Low Gate Charge (Typ 7.8nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:Power Supply,LED Boost 1 3 3 3 1. Gate 2. Drain 3. Source General Descrip

 9.1. Size:1061K  samwin
 swn2n70d swd2n70d swl2n70d swf2n70d.pdf pdf_icon

SWN2N65K

SW2N70D N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET Features BVDSS : 700V TO-220F TO-251N TO-252 TO-126 ID : 2A High ruggedness Low RDS(ON) (Typ 5)@VGS=10V RDS(ON) : 5 Low Gate Charge (Typ 11nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application: Charger,LED 3 3 3 3 1 1. Gate 2.

Datasheet: SWMN6N65K , SWMN7N65J , SWMN7N65K , SWMN7N90D , SWMN8N65LA , SWN10N50K , SWN10N65K , SWN10N80K2 , IRF2807 , SWN2N70D , SWN3N80D , SWN4N50K , SWN4N65DA , SWN4N65DD , SWN4N65K2 , SWN4N70D1 , SWN4N70K2 .

History: APM2360A | AOB66613L | 2N4867 | AON6552 | FQD4P25TM | BSC252N10NSF | IRF7665S2TRPBF

Keywords - SWN2N65K MOSFET datasheet

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