SWN3N80D Specs and Replacement

Type Designator: SWN3N80D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO251

SWN3N80D substitution

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SWN3N80D datasheet

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SWN3N80D

SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS 800V TO-220F High ruggedness ID 3A Low RDS(ON) (Typ 3.8 )@VGS=10V RDS(ON) 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application DC-DC LED PC 3 3 3 1 1. Gate 2. Drain 3. Source ... See More ⇒

Detailed specifications: SWMN7N65K, SWMN7N90D, SWMN8N65LA, SWN10N50K, SWN10N65K, SWN10N80K2, SWN2N65K, SWN2N70D, 2N60, SWN4N50K, SWN4N65DA, SWN4N65DD, SWN4N65K2, SWN4N70D1, SWN4N70K2, SWN4N70L, SWN4N80D

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