All MOSFET. SWN3N80D Datasheet

 

SWN3N80D Datasheet and Replacement


   Type Designator: SWN3N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO251
 

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SWN3N80D Datasheet (PDF)

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SWN3N80D

SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS : 800V TO-220F High ruggedness ID : 3A Low RDS(ON) (Typ 3.8)@VGS=10V RDS(ON) : 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application: DC-DCLEDPC 3 3 3 1 1. Gate 2. Drain 3. Source

Datasheet: SWMN7N65K , SWMN7N90D , SWMN8N65LA , SWN10N50K , SWN10N65K , SWN10N80K2 , SWN2N65K , SWN2N70D , IRF830 , SWN4N50K , SWN4N65DA , SWN4N65DD , SWN4N65K2 , SWN4N70D1 , SWN4N70K2 , SWN4N70L , SWN4N80D .

History: CEP6086L | MXP6004CTS | HGB105N15SL | SSF2610E | STP10NK60Z | TPCA8027-H | GP1T080A120B

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