SP8601 Datasheet and Replacement
Type Designator: SP8601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: SMINI8
SP8601 substitution
SP8601 Datasheet (PDF)
sp8601.pdf

GreenProductSP8601aS mHop Microelectronics C orp.Ver 2.5Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=4.5VSuface Mount Package.18.5 @ VGS=4.0V20V 7.2A 20.0 @ VGS=3.7V ESD Protected.24.5 @ VGS=3.1V27.0 @ VGS=2.5VD1 D1 D2 D2S mi
sp8608.pdf

GreenProductSP8608aS mHop Microelectronics C orp.Ver 2.4Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.5 @ VGS=4.5VSuface Mount Package.9.8 @ VGS=4.0VESD Protected.20V 12A 10.5 @ VGS=3.8V12.5 @ VGS=3.1V15.0 @ VGS=2.5V5 4D2 G 26 3D
Datasheet: SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , IRFB4227 , FDS6911 , FDS6930B , SP8256 , FDS6982AS , SP8255 , FDS6984AS , SP8076EL , FDS6986AS .
History: FQA10N80CF109 | FDS6898AZF085
Keywords - SP8601 MOSFET datasheet
SP8601 cross reference
SP8601 equivalent finder
SP8601 lookup
SP8601 substitution
SP8601 replacement
History: FQA10N80CF109 | FDS6898AZF085



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