SWN8N80K MOSFET. Datasheet pdf. Equivalent
Type Designator: SWN8N80K
Marking Code: SW8N80K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 44 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO251
SWN8N80K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWN8N80K Datasheet (PDF)
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SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SPE65R360G
