SWN8N80K Datasheet. Specs and Replacement
Type Designator: SWN8N80K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO251
SWN8N80K substitution
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SWN8N80K datasheet
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SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE... See More ⇒
Detailed specifications: SWN6N60D, SWN6N65K, SWN6N70DB, SWN7N65DA, SWN7N65DD, SWN7N65K, SWN7N65K2, SWN7N65M, MMIS60R580P, SWNB4N65DA, SWNC4N65DC, SWNC4N65DD, SWNC4N70D1, SWNX8N65D, SWP020R03VLT, SWP030R04VT, SWP031R06ET
Keywords - SWN8N80K MOSFET specs
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