All MOSFET. SWN8N80K Datasheet

 

SWN8N80K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWN8N80K
   Marking Code: SW8N80K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO251

 SWN8N80K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWN8N80K Datasheet (PDF)

 ..1. Size:986K  samwin
 swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf

SWN8N80K SWN8N80K

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEA01P13K | SSF6007

 

 
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