SWNB4N65DA Datasheet. Specs and Replacement

Type Designator: SWNB4N65DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm

Package: TO251

SWNB4N65DA substitution

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SWNB4N65DA datasheet

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SWNB4N65DA

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow... See More ⇒

Detailed specifications: SWN6N65K, SWN6N70DB, SWN7N65DA, SWN7N65DD, SWN7N65K, SWN7N65K2, SWN7N65M, SWN8N80K, AOD4184A, SWNC4N65DC, SWNC4N65DD, SWNC4N70D1, SWNX8N65D, SWP020R03VLT, SWP030R04VT, SWP031R06ET, SWP035R10E6S

Keywords - SWNB4N65DA MOSFET specs

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