All MOSFET. SWNB4N65DA Datasheet

 

SWNB4N65DA Datasheet and Replacement


   Type Designator: SWNB4N65DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO251
 

 SWNB4N65DA substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWNB4N65DA Datasheet (PDF)

 ..1. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf pdf_icon

SWNB4N65DA

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

Datasheet: SWN6N65K , SWN6N70DB , SWN7N65DA , SWN7N65DD , SWN7N65K , SWN7N65K2 , SWN7N65M , SWN8N80K , HY1906P , SWNC4N65DC , SWNC4N65DD , SWNC4N70D1 , SWNX8N65D , SWP020R03VLT , SWP030R04VT , SWP031R06ET , SWP035R10E6S .

History: HGP082N10M | RSD050N10FRA | SIHFB9N65A | SUM110N08-07P | IRFS621 | CS5NB90 | SIHF30N60E

Keywords - SWNB4N65DA MOSFET datasheet

 SWNB4N65DA cross reference
 SWNB4N65DA equivalent finder
 SWNB4N65DA lookup
 SWNB4N65DA substitution
 SWNB4N65DA replacement

 

 
Back to Top

 


 
.