All MOSFET. SWNB4N65DA Datasheet

 

SWNB4N65DA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWNB4N65DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO251

 SWNB4N65DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWNB4N65DA Datasheet (PDF)

 ..1. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf

SWNB4N65DA SWNB4N65DA

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

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