SWP020R03VLT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP020R03VLT
Marking Code: SW020R03VLT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 140 nC
Rise Time (tr): 64 nS
Drain-Source Capacitance (Cd): 1018 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
SWP020R03VLT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP020R03VLT Datasheet (PDF)
swp020r03vlt swb020r03vlt.pdf
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SW020R03VLTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-263TO-220BVDSS : 30V High ruggednessID : 180A Low RDS(ON) (Typ 3.6m)@VGS=4.5V(Typ 2.1m)@VGS=10V RDS(ON) : 3.6m@VGS=4.5V Low Gate Charge (Typ 140nC)2.1m@VGS=10V Improved dv/dt Capability 112 100% Avalanche Tested 2233 Application:Synchronous Rectification,Li B
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