SWP020R03VLT Datasheet. Specs and Replacement

Type Designator: SWP020R03VLT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 1018 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

SWP020R03VLT substitution

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SWP020R03VLT datasheet

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SWP020R03VLT

SW020R03VLT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS 30V High ruggedness ID 180A Low RDS(ON) (Typ 3.6m )@VGS=4.5V (Typ 2.1m )@VGS=10V RDS(ON) 3.6m @VGS=4.5V Low Gate Charge (Typ 140nC) 2.1m @VGS=10V Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 Application Synchronous Rectification, Li B... See More ⇒

Detailed specifications: SWN7N65K2, SWN7N65M, SWN8N80K, SWNB4N65DA, SWNC4N65DC, SWNC4N65DD, SWNC4N70D1, SWNX8N65D, IRF730, SWP030R04VT, SWP031R06ET, SWP035R10E6S, SWP036R10E8S, SWP038R04VT, SWP042R10ES, SWP046R08E8T, SWP046R08E9T

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