All MOSFET. SP8256 Datasheet

 

SP8256 Datasheet and Replacement


   Type Designator: SP8256
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN2X5
 

 SP8256 substitution

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SP8256 Datasheet (PDF)

 ..1. Size:101K  samhop
 sp8256.pdf pdf_icon

SP8256

GreenProductSP8256aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.8.3 @ VGS=4.5VSuface Mount Package.8.6 @ VGS=3.9VESD Protected.9.0 @ VGS=3.5V20V 11A10.0 @ VGS=3.1V12.5 @ VGS=2.5VG2DF N 2X5DF

 9.1. Size:95K  1
 sp8255.pdf pdf_icon

SP8256

GreenProductSP8255aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.15.0 @ VGS=4.5VSuface Mount Package.16.0 @ VGS=4.0V ESD Protected.16.5 @ VGS=3.7V20V 7A18.0 @ VGS=3.1V23.0 @ VGS=2.5VG2DF N 2X 5S

Datasheet: FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 , FDS6911 , FDS6930B , IRF9540 , FDS6982AS , SP8255 , FDS6984AS , SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 .

Keywords - SP8256 MOSFET datasheet

 SP8256 cross reference
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