SP8256 MOSFET Datasheet: N-Ch, 20V, 11A. Full specification with pinout and replacement list

SP8256 Specs and Replacement

   Type Designator: SP8256
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: DFN2X5

SP8256 substitution

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SP8256 datasheet

..1. Size:101K samhop
sp8256.pdf pdf_icon

Green Product SP8256 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 8.3 @ VGS=4.5V Suface Mount Package. 8.6 @ VGS=3.9V ESD Protected. 9.0 @ VGS=3.5V 20V 11A 10.0 @ VGS=3.1V 12.5 @ VGS=2.5V G2 DF N 2X5 D F ... See More ⇒

9.1. Size:95K 1
sp8255.pdf pdf_icon

Green Product SP8255 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 15.0 @ VGS=4.5V Suface Mount Package. 16.0 @ VGS=4.0V ESD Protected. 16.5 @ VGS=3.7V 20V 7A 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V G2 DF N 2X 5 S... See More ⇒

Detailed specifications: FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 , FDS6911 , FDS6930B , 2N7000 , FDS6982AS , SP8255 , FDS6984AS , SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 .