SP8256 Datasheet. Specs and Replacement

Type Designator: SP8256  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 278 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: DFN2X5

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SP8256 datasheet

 ..1. Size:101K  samhop
 sp8256.pdf pdf_icon

SP8256

Green Product SP8256 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 8.3 @ VGS=4.5V Suface Mount Package. 8.6 @ VGS=3.9V ESD Protected. 9.0 @ VGS=3.5V 20V 11A 10.0 @ VGS=3.1V 12.5 @ VGS=2.5V G2 DF N 2X5 D F ... See More ⇒

 9.1. Size:95K  1
 sp8255.pdf pdf_icon

SP8256

Green Product SP8255 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 15.0 @ VGS=4.5V Suface Mount Package. 16.0 @ VGS=4.0V ESD Protected. 16.5 @ VGS=3.7V 20V 7A 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V G2 DF N 2X 5 S... See More ⇒

Detailed specifications: FDS6898AZ, FDS6898AZF085, FDS6900AS, SP8608, FDS6910, SP8601, FDS6911, FDS6930B, IRFB4227, FDS6982AS, SP8255, FDS6984AS, SP8076EL, FDS6986AS, SP8076E, FDS6990AS, SP8076

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