SP8255 Datasheet and Replacement
Type Designator: SP8255
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 136 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN2X5
- MOSFET Cross-Reference Search
SP8255 Datasheet (PDF)
sp8255.pdf

GreenProductSP8255aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.15.0 @ VGS=4.5VSuface Mount Package.16.0 @ VGS=4.0V ESD Protected.16.5 @ VGS=3.7V20V 7A18.0 @ VGS=3.1V23.0 @ VGS=2.5VG2DF N 2X 5S
sp8256.pdf

GreenProductSP8256aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.8.3 @ VGS=4.5VSuface Mount Package.8.6 @ VGS=3.9VESD Protected.9.0 @ VGS=3.5V20V 11A10.0 @ VGS=3.1V12.5 @ VGS=2.5VG2DF N 2X5DF
Datasheet: FDS6900AS , SP8608 , FDS6910 , SP8601 , FDS6911 , FDS6930B , SP8256 , FDS6982AS , STP75NF75 , FDS6984AS , SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 , FDS6994S , SP8013 .
History: JCS6N90B | ZVP3306ASTOA | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003
Keywords - SP8255 MOSFET datasheet
SP8255 cross reference
SP8255 equivalent finder
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History: JCS6N90B | ZVP3306ASTOA | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003



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