SWP090R08ET Datasheet. Specs and Replacement

Type Designator: SWP090R08ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 254 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220

SWP090R08ET substitution

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SWP090R08ET datasheet

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SWP090R08ET

SW090R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V ID 80A High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=10V RDS(ON) 9.0m Low Gate Charge (Typ 77nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2. Drain 3. Sour... See More ⇒

Detailed specifications: SWP078R08E8T, SWP078R08ET, SWP085R06V7T, SWP085R06VT, SWP085R68E7T, SWP086R68E7T, SWP088R06VT, SWP088R08E8T, AON7410, SWP100N10A, SWP100N10B, SWP100R10VT, SWP10N50K, SWP10N65D, SWP10N65K, SWP110R06VT, SWP11N65D

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