SWP090R08ET MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP090R08ET
Marking Code: SW090R08ET
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 77 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 254 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO220
SWP090R08ET Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP090R08ET Datasheet (PDF)
..1. Size:833K samwin
swp090r08et swb090r08et.pdf
swp090r08et swb090r08et.pdf
SW090R08ETN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263 BVDSS : 80VID : 80A High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=10VRDS(ON) : 9.0mLow Gate Charge (Typ 77nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification, 3 31Li Battery Protect Board, Inverter1. Gate 2. Drain 3. Sour
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
