All MOSFET. SWP110R06VT Datasheet

 

SWP110R06VT Datasheet and Replacement


   Type Designator: SWP110R06VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 218 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO220
 

 SWP110R06VT substitution

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SWP110R06VT Datasheet (PDF)

 ..1. Size:654K  samwin
 swp110r06vt.pdf pdf_icon

SWP110R06VT

SW110R06VTN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220 BVDSS : 60V High ruggednessID : 85A Low RDS(ON) (Typ 11m)@VGS=4.5V(Typ 9.6m)@VGS=10VRDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 69nC)9.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 223 Application: Electronic Ballast, Motor Control, Synchronous Rectificati

 9.1. Size:813K  samwin
 swp11n65d swf11n65d swu11n65d.pdf pdf_icon

SWP110R06VT

SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS : 650V Features ID : 11A High ruggedness RDS(ON) : 0.75 Low RDS(ON) (Typ 0.75)@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Source

Datasheet: SWP088R08E8T , SWP090R08ET , SWP100N10A , SWP100N10B , SWP100R10VT , SWP10N50K , SWP10N65D , SWP10N65K , IRLB4132 , SWP11N65D , SWP13N50D , SWP13N65K2 , SWP160R12VT , SWP17N80K , SWP180N75A , SWP19N10 , SWP20N65K .

History: HGP080N10A | SSW60R190SFD | 2SK113O | RU7582S | ELM14614AA | HRLD125N06K | HGP080N08SL

Keywords - SWP110R06VT MOSFET datasheet

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