SWP110R06VT Datasheet. Specs and Replacement

Type Designator: SWP110R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 218 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TO220

SWP110R06VT substitution

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SWP110R06VT datasheet

 ..1. Size:654K  samwin
 swp110r06vt.pdf pdf_icon

SWP110R06VT

SW110R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 85A Low RDS(ON) (Typ 11m )@VGS=4.5V (Typ 9.6m )@VGS=10V RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 69nC) 9.6m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application Electronic Ballast, Motor Control, Synchronous Rectificati... See More ⇒

 9.1. Size:813K  samwin
 swp11n65d swf11n65d swu11n65d.pdf pdf_icon

SWP110R06VT

SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS 650V Features ID 11A High ruggedness RDS(ON) 0.75 Low RDS(ON) (Typ 0.75 )@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application LED , Adaptor 1. Gate 2. Drain 3. Source... See More ⇒

Detailed specifications: SWP088R08E8T, SWP090R08ET, SWP100N10A, SWP100N10B, SWP100R10VT, SWP10N50K, SWP10N65D, SWP10N65K, CS150N03A8, SWP11N65D, SWP13N50D, SWP13N65K2, SWP160R12VT, SWP17N80K, SWP180N75A, SWP19N10, SWP20N65K

Keywords - SWP110R06VT MOSFET specs

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