SWP13N65K2 Datasheet. Specs and Replacement

Type Designator: SWP13N65K2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220

SWP13N65K2 substitution

- MOSFET ⓘ Cross-Reference Search

 

SWP13N65K2 datasheet

 ..1. Size:1576K  samwin
 swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf pdf_icon

SWP13N65K2

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3... See More ⇒

 8.1. Size:816K  samwin
 swf13n50d swp13n50d.pdf pdf_icon

SWP13N65K2

SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS 500V Features TO-220 ID 13A High ruggedness RDS(ON) 0.46 RDS(ON) (Typ 0.46 )@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi... See More ⇒

Detailed specifications: SWP100N10B, SWP100R10VT, SWP10N50K, SWP10N65D, SWP10N65K, SWP110R06VT, SWP11N65D, SWP13N50D, STP80NF70, SWP160R12VT, SWP17N80K, SWP180N75A, SWP19N10, SWP20N65K, SWP3205B, SWP340R10VT, SWP540

Keywords - SWP13N65K2 MOSFET specs

 SWP13N65K2 cross reference

 SWP13N65K2 equivalent finder

 SWP13N65K2 pdf lookup

 SWP13N65K2 substitution

 SWP13N65K2 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility