SWP180N75A Datasheet and Replacement
Type Designator: SWP180N75A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 181 nS
Cossⓘ - Output Capacitance: 887 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220
SWP180N75A substitution
SWP180N75A Datasheet (PDF)
swp180n75a.pdf

SW180N75A N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 75V TO-220 High ruggedness ID : 180A Low RDS(ON) (Typ 2.8m)@VGS=10V RDS(ON) : 2.8m Low Gate Charge (Typ 178nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 ApplicationSynchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drain 3. So
Datasheet: SWP10N65D , SWP10N65K , SWP110R06VT , SWP11N65D , SWP13N50D , SWP13N65K2 , SWP160R12VT , SWP17N80K , P60NF06 , SWP19N10 , SWP20N65K , SWP3205B , SWP340R10VT , SWP540 , SWP630A1 , SWP640D , SWP70N10V .
History: BL90N25-F | LSE60R092GT | AP3A010MT | P2003ED | 2SK1916 | SUM90N10-8M2P | SI4686DY
Keywords - SWP180N75A MOSFET datasheet
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History: BL90N25-F | LSE60R092GT | AP3A010MT | P2003ED | 2SK1916 | SUM90N10-8M2P | SI4686DY



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