SWP180N75A MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP180N75A
Marking Code: SW180N75A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 178 nC
Rise Time (tr): 181 nS
Drain-Source Capacitance (Cd): 887 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
Package: TO220
SWP180N75A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP180N75A Datasheet (PDF)
..1. Size:520K samwin
swp180n75a.pdf
swp180n75a.pdf
SW180N75A N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 75V TO-220 High ruggedness ID : 180A Low RDS(ON) (Typ 2.8m)@VGS=10V RDS(ON) : 2.8m Low Gate Charge (Typ 178nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 ApplicationSynchronous Rectification, 3 Li Battery Protect Board, Inverter 1 1. Gate 2. Drain 3. So
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