SWP3205B MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP3205B
Marking Code: SW3205B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 540 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220
SWP3205B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP3205B Datasheet (PDF)
swp3205b.pdf
SW3205B N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 60V TO-220 ID : 110A High ruggedness Low RDS(ON) (Typ 4.8m)@VGS=10V RDS(ON) : 4.8m Low Gate Charge (Typ 80nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application: DC-DC Converter, Inverter, 3 1 Synchronous Rectification 1. Gate 2. Drain 3. Source 3 Gene
sw3205 swp3205.pdf
SAMWIN SW3205N-channel MOSFETFeatures TO-220BVDSS : 55VID : 110A High ruggedness RDS(ON) (Max 0.008 )@VGS=10VRDS(ON) : 0.008 ohm Gate Charge (Typ 146nC) Improved dv/dt Capability 100% Avalanche Tested212311. Gate 2. Drain 3. SourceGeneral Description3This N-channel enhancement mode field-effect power transistor using SAMWINsemiconductor
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
