All MOSFET. SWP3205B Datasheet

 

SWP3205B Datasheet and Replacement


   Type Designator: SWP3205B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
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SWP3205B Datasheet (PDF)

 ..1. Size:613K  samwin
 swp3205b.pdf pdf_icon

SWP3205B

SW3205B N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 60V TO-220 ID : 110A High ruggedness Low RDS(ON) (Typ 4.8m)@VGS=10V RDS(ON) : 4.8m Low Gate Charge (Typ 80nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application: DC-DC Converter, Inverter, 3 1 Synchronous Rectification 1. Gate 2. Drain 3. Source 3 Gene

 7.1. Size:662K  samwin
 sw3205 swp3205.pdf pdf_icon

SWP3205B

SAMWIN SW3205N-channel MOSFETFeatures TO-220BVDSS : 55VID : 110A High ruggedness RDS(ON) (Max 0.008 )@VGS=10VRDS(ON) : 0.008 ohm Gate Charge (Typ 146nC) Improved dv/dt Capability 100% Avalanche Tested212311. Gate 2. Drain 3. SourceGeneral Description3This N-channel enhancement mode field-effect power transistor using SAMWINsemiconductor

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History: IXTH96N20P | SRM4N65U | CHM4531PAGP | CES2362 | IRFF230 | 3SK123 | HY3215M

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