All MOSFET. SWP70N10V Datasheet

 

SWP70N10V Datasheet and Replacement


   Type Designator: SWP70N10V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 95 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220
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SWP70N10V Datasheet (PDF)

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SWP70N10V

SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features BVDSS : 95V TO-251 TO-252 TO-220 High ruggedness ID : 70A Low RDS(ON) (Typ 12.4m)@VGS=4.5V Low RDS(ON) (Typ 11.7m)@VGS=10V RDS(ON) : 12.4m @VGS=4.5V Low Gate Charge (Typ 117nC) 11.7m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTK62N25 | SSH3N70A | PK5G6EA | HGS110N08A | AM60N02-09D | HGB068N15S | ELM549407A

Keywords - SWP70N10V MOSFET datasheet

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