SWP80N08V1 PDF and Equivalents Search

 

SWP80N08V1 Specs and Replacement

Type Designator: SWP80N08V1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 312 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: TO220

SWP80N08V1 substitution

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SWP80N08V1 datasheet

 ..1. Size:785K  samwin
 swp80n08v1.pdf pdf_icon

SWP80N08V1

SW80N08V1 N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 78nC) 9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 2 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter ... See More ⇒

Detailed specifications: SWP340R10VT, SWP540, SWP630A1, SWP640D, SWP70N10V, SWP740D, SWP7N65K, SWP7N70K, 20N50, SWP830D1, SWP8N65D, SWP9N25D, SWP9N50D, SWR601Q, SWSA1N60DC, SWSA2N40D, SWSI2N40DC

Keywords - SWP80N08V1 MOSFET specs

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