All MOSFET. SWP80N08V1 Datasheet

 

SWP80N08V1 Datasheet and Replacement


   Type Designator: SWP80N08V1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 312 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: TO220
 

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SWP80N08V1 Datasheet (PDF)

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SWP80N08V1

SW80N08V1N-channel Enhanced mode TO-220 MOSFETFeaturesTO-220 BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 10m)@VGS=4.5V(Typ 9m)@VGS=10VRDS(ON) : 10m @VGS=4.5V Low Gate Charge (Typ 78nC)9m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested12 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter

Datasheet: SWP340R10VT , SWP540 , SWP630A1 , SWP640D , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , 2N60 , SWP830D1 , SWP8N65D , SWP9N25D , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC .

History: IRFS7534-7PPBF | BLP04N10-B | RQA0008NXAQS | AM2394NE | SIA811ADJ | S-LNTK2575LT1G | HMS28N65D

Keywords - SWP80N08V1 MOSFET datasheet

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