All MOSFET. SWP8N65D Datasheet

 

SWP8N65D Datasheet and Replacement


   Type Designator: SWP8N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220
 

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SWP8N65D Datasheet (PDF)

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SWP8N65D

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg

Datasheet: SWP630A1 , SWP640D , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , IRFB31N20D , SWP9N25D , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D .

History: SPC1018 | AM5829P | HGN090N06SL | APT6011B2VFRG | 5N65KG-TMS-T | VBM17R10 | SLF70R420S2

Keywords - SWP8N65D MOSFET datasheet

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