SWP8N65D Datasheet and Replacement
Type Designator: SWP8N65D
Marking Code: SW8N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 32 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 116 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220
SWP8N65D substitution
SWP8N65D Datasheet (PDF)
swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf
SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg
Datasheet: SWP630A1 , SWP640D , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , IRF2807 , SWP9N25D , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D .
Keywords - SWP8N65D MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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