All MOSFET. SWP9N50D Datasheet

 

SWP9N50D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP9N50D
   Marking Code: SW9N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220

 SWP9N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP9N50D Datasheet (PDF)

 ..1. Size:1249K  samwin
swf9n50d swp9n50d swd9n50d.pdf

SWP9N50D
SWP9N50D

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS : 500V ID : 9A High ruggedness Low RDS(ON) (Typ 0.68)@VGS=10V RDS(ON) : 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application: DC-DCLEDPC 3 3 3 1. Gate 2. Drain 3. Source

 9.1. Size:824K  samwin
swp9n25d swd9n25d.pdf

SWP9N50D
SWP9N50D

SW9N25D N-channel Enhanced mode TO-220/TO-252 MOSFET BVDSS : 250V Features TO-220 TO-252 ID : 9A High ruggedness RDS(ON) : 0.37 Low RDS(ON) (Typ 0.37)@VGS=10V Low Gate Charge (Typ 20.3nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1 Application: LED , DC-DC 1. Gate 2. Drain 3. Source 3 General Description

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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