SWP9N50D MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

SWP9N50D Specs and Replacement

Type Designator: SWP9N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

SWP9N50D substitution

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SWP9N50D datasheet

..1. Size:1249K samwin
swf9n50d swp9n50d swd9n50d.pdf pdf_icon

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS 500V ID 9A High ruggedness Low RDS(ON) (Typ 0.68 )@VGS=10V RDS(ON) 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application DC-DC LED PC 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒

9.1. Size:824K samwin
swp9n25d swd9n25d.pdf pdf_icon

SW9N25D N-channel Enhanced mode TO-220/TO-252 MOSFET BVDSS 250V Features TO-220 TO-252 ID 9A High ruggedness RDS(ON) 0.37 Low RDS(ON) (Typ 0.37 )@VGS=10V Low Gate Charge (Typ 20.3nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1 Application LED , DC-DC 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒

Detailed specifications: SWP70N10V, SWP740D, SWP7N65K, SWP7N70K, SWP80N08V1, SWP830D1, SWP8N65D, SWP9N25D, IRFZ24N, SWR601Q, SWSA1N60DC, SWSA2N40D, SWSI2N40DC, SWSI4N40DC, SWSI4N60D, SWSI4N60DA, SWSI4N70D1