SWR601Q PDF and Equivalents Search

 

SWR601Q Specs and Replacement

Type Designator: SWR601Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.02 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 2.6 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm

Package: SOT23

SWR601Q substitution

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SWR601Q datasheet

 ..1. Size:511K  samwin
 swr601q.pdf pdf_icon

SWR601Q

SW601Q N-channel Depletion mode SOT23 MOSFET BVDSS 600V SOT23 3 Features ID 0.02A RDS(ON) 540 Low RDS(ON) (Typ 540 )@VGS=0V,ID=3mA High Switching Speed 1 Application LED,Charger 3 2 1. Source 2. Gate 3. Drain 2 General Description 1 The SW601Q is an N-channel power MOSFET using SAMWIN s Advanced technology to provide the customers with ... See More ⇒

Detailed specifications: SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D , SWP9N50D , 2N60 , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K .

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