All MOSFET. SWR601Q Datasheet

 

SWR601Q Datasheet and Replacement


   Type Designator: SWR601Q
   Marking Code: SW601Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.8 V
   |Id| ⓘ - Maximum Drain Current: 0.02 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.55 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT23
 
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SWR601Q Datasheet (PDF)

 ..1. Size:511K  samwin
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SWR601Q

SW601Q N-channel Depletion mode SOT23 MOSFET BVDSS : 600V SOT23 3 Features ID : 0.02A RDS(ON) : 540 Low RDS(ON) (Typ 540)@VGS=0V,ID=3mA High Switching Speed 1 Application:LED,Charger 3 2 1. Source 2. Gate 3. Drain 2 General Description 1 The SW601Q is an N-channel power MOSFET using SAMWINs Advanced technology to provide the customers with

Datasheet: SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D , SWP9N50D , IRF830 , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K .

History: NVBG080N120SC1

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