All MOSFET. SWR601Q Datasheet

 

SWR601Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWR601Q
   Marking Code: SW601Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.55 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT23

 SWR601Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWR601Q Datasheet (PDF)

 ..1. Size:511K  samwin
 swr601q.pdf

SWR601Q SWR601Q

SW601Q N-channel Depletion mode SOT23 MOSFET BVDSS : 600V SOT23 3 Features ID : 0.02A RDS(ON) : 540 Low RDS(ON) (Typ 540)@VGS=0V,ID=3mA High Switching Speed 1 Application:LED,Charger 3 2 1. Source 2. Gate 3. Drain 2 General Description 1 The SW601Q is an N-channel power MOSFET using SAMWINs Advanced technology to provide the customers with

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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