All MOSFET. SWSA1N60DC Datasheet

 

SWSA1N60DC Datasheet and Replacement


   Type Designator: SWSA1N60DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 9.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: SOT223
 

 SWSA1N60DC substitution

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SWSA1N60DC Datasheet (PDF)

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SWSA1N60DC

SW1N60DCN-channel Enhanced mode TO-252/SOT223 MOSFETFeaturesTO-252 SOT223BVDSS : 600VID : 1A High ruggedness Low RDS(ON) (Typ 7)@VGS=10VRDS(ON) : 7 Low Gate Charge (Typ6.3 nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:Charger,Adaptor,LED 3311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET

Datasheet: SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D , SWP9N50D , SWR601Q , K2611 , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K , SWT20N50D .

History: YTF640 | AOTF66613L | BLF7G27LS-100 | IXTT4N150HV | UTT25P10L-TQ2-T | TPCA8050-H | IXTT140N10P

Keywords - SWSA1N60DC MOSFET datasheet

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