All MOSFET. SWSI2N40DC Datasheet

 

SWSI2N40DC Datasheet and Replacement


   Type Designator: SWSI2N40DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO251
 

 SWSI2N40DC substitution

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SWSI2N40DC Datasheet (PDF)

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SWSI2N40DC

SW2N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-251S BVDSS : 400V TO-252 ID : 2A High ruggedness Low RDS(ON) (Typ 2.8)@VGS=10V RDS(ON) : 2.8 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description

Datasheet: SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , IRF520 , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K , SWT20N50D , SWT20N65D , SWT22N65D .

History: CTLM8110-M832D | HSS2306A

Keywords - SWSI2N40DC MOSFET datasheet

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