All MOSFET. SWSI2N40DC Datasheet

 

SWSI2N40DC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWSI2N40DC
   Marking Code: SW2N40DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO251

 SWSI2N40DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWSI2N40DC Datasheet (PDF)

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swsi2n40dc swd2n40dc.pdf

SWSI2N40DC
SWSI2N40DC

SW2N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-251S BVDSS : 400V TO-252 ID : 2A High ruggedness Low RDS(ON) (Typ 2.8)@VGS=10V RDS(ON) : 2.8 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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