SWT22N65D Datasheet and Replacement
Type Designator: SWT22N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 106 nS
Cossⓘ - Output Capacitance: 423 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO247
SWT22N65D substitution
SWT22N65D Datasheet (PDF)
swt22n65d.pdf

SW22N65D N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 22A High ruggedness RDS(ON) : 0.22 Low RDS(ON) (Typ 0.22)@VGS=10V Low Gate Charge (Typ 123nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This p
Datasheet: SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K , SWT20N50D , SWT20N65D , P0903BDG , SWT24N50D , SWT38N60K , SWT38N65K , SWT38N65K2 , SWT38N65K2F , SWT38N70K , SWT45N60K2 , SWT45N60K2F .
History: FMI13N60E | 2N5198 | RJK2057DPA
Keywords - SWT22N65D MOSFET datasheet
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History: FMI13N60E | 2N5198 | RJK2057DPA



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