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SWT22N65D Spec and Replacement


   Type Designator: SWT22N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 423 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247

 SWT22N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWT22N65D Specs

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SWT22N65D

SW22N65D N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 22A High ruggedness RDS(ON) 0.22 Low RDS(ON) (Typ 0.22 )@VGS=10V Low Gate Charge (Typ 123nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This p... See More ⇒

Detailed specifications: SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K , SWT20N50D , SWT20N65D , IRF830 , SWT24N50D , SWT38N60K , SWT38N65K , SWT38N65K2 , SWT38N65K2F , SWT38N70K , SWT45N60K2 , SWT45N60K2F .

Keywords - SWT22N65D MOSFET specs

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