SWT24N50D Spec and Replacement
Type Designator: SWT24N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 503 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
SWT24N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWT24N50D Specs
swt24n50d.pdf
SW24N50D N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 500V Features ID 24A High ruggedness RDS(ON) 0.14 Low RDS(ON) (Typ 0.14 )@VGS=10V Low Gate Charge (Typ 129nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This p... See More ⇒
Detailed specifications: SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , SWT10N50K , SWT20N50D , SWT20N65D , SWT22N65D , IRLB3034 , SWT38N60K , SWT38N65K , SWT38N65K2 , SWT38N65K2F , SWT38N70K , SWT45N60K2 , SWT45N60K2F , SWT45N65K2 .
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