SP8076
MOSFET. Datasheet pdf. Equivalent
Type Designator: SP8076
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.67
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 78
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046
Ohm
Package: TSON3.3X3.3
SP8076
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP8076
Datasheet (PDF)
..1. Size:79K samhop
sp8076.pdf 
GreenProductSP8076aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.4.6 @ VGS=10VSuface Mount Package.33V 27A6.9 @ VGS=4.5V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol
0.1. Size:112K samhop
sp8076e.pdf
GreenProductSP8076EaS mHop Microelectronics C orp.Ver 1.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.3.8 @ VGS=10VSuface Mount Package.33V 27A4.9 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX
0.2. Size:107K samhop
sp8076el.pdf
GreenProductSP8076ELaS mHop Microelectronics C orp.Ver 1.4N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.4.0 @ VGS=10VSuface Mount Package.33V 27A 4.5 @ VGS=6VESD Protected.5.5 @ VGS=4.5VD 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3
Datasheet: SP8256
, FDS6982AS
, SP8255
, FDS6984AS
, SP8076EL
, FDS6986AS
, SP8076E
, FDS6990AS
, SPP20N60C3
, FDS6994S
, SP8013
, FDS8447
, FDS8449
, FDS8449F085
, FDS86106
, SP8010E
, FDS86140
.
