All MOSFET. SWT50N65LF Datasheet

 

SWT50N65LF Datasheet and Replacement


   Type Designator: SWT50N65LF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO247
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SWT50N65LF Datasheet (PDF)

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SWT50N65LF

SW50N65LF N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 50A High ruggedness Low RDS(ON) (Typ 77m)@VGS=10V RDS(ON) : 77m Low Gate Charge (Typ 136nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: UPS, LED, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description T

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History: IRFPF32 | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD

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