SWT50N65LF Specs and Replacement
Type Designator: SWT50N65LF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO247
SWT50N65LF substitution
- MOSFET ⓘ Cross-Reference Search
SWT50N65LF datasheet
swt50n65lf.pdf
SW50N65LF N-channel Enhanced mode TO-247 MOSFET Features BVDSS 650V TO-247 ID 50A High ruggedness Low RDS(ON) (Typ 77m )@VGS=10V RDS(ON) 77m Low Gate Charge (Typ 136nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application UPS, LED, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description T... See More ⇒
Detailed specifications: SWT45N60K2F, SWT45N65K2, SWT45N65K2F, SWT47N60K, SWT47N65K, SWT47N65K2F, SWT47N65KF, SWT47N70K, IRF3205, SWT69N65K2, SWT69N65K2F, SWU069R10VS, SWU100R10VT, SWU10N65D, SWU10N65K, SWU11N65D, SWU16N70K
Keywords - SWT50N65LF MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IXFA180N10T2
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