SWT50N65LF MOSFET. Datasheet pdf. Equivalent
Type Designator: SWT50N65LF
Marking Code: SW50N65LF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 136 nC
trⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 144 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO247
SWT50N65LF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWT50N65LF Datasheet (PDF)
..1. Size:704K samwin
swt50n65lf.pdf
swt50n65lf.pdf
SW50N65LF N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 50A High ruggedness Low RDS(ON) (Typ 77m)@VGS=10V RDS(ON) : 77m Low Gate Charge (Typ 136nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: UPS, LED, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description T
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
