SWX170R15ET MOSFET. Datasheet pdf. Equivalent
Type Designator: SWX170R15ET
Marking Code: SW170R15ET
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 192 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 66 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 164 nC
Rise Time (tr): 193 nS
Drain-Source Capacitance (Cd): 321 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0196 Ohm
Package: TO220
SWX170R15ET Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWX170R15ET Datasheet (PDF)
..1. Size:614K samwin
swx170r15et.pdf
swx170r15et.pdf
SW170R15ET N-channel Enhanced mode TO-220FB MOSFET Features BVDSS : 150V TO-220FB High ruggedness ID : 66A Low RDS(ON) (Typ 15.7m)@VGS=10V RDS(ON) : 15.7m Low Gate Charge (Typ 164nC) Improved dv/dt Capability 100% Avalanche Tested D 1 Application: Synchronous Rectification, 2 3 Li Battery Protect Board , Inverter G 1. Gate 2
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
