All MOSFET. SWX170R15ET Datasheet

 

SWX170R15ET MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWX170R15ET
   Marking Code: SW170R15ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 164 nC
   trⓘ - Rise Time: 193 nS
   Cossⓘ - Output Capacitance: 321 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0196 Ohm
   Package: TO220

 SWX170R15ET Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWX170R15ET Datasheet (PDF)

 ..1. Size:614K  samwin
 swx170r15et.pdf

SWX170R15ET SWX170R15ET

SW170R15ET N-channel Enhanced mode TO-220FB MOSFET Features BVDSS : 150V TO-220FB High ruggedness ID : 66A Low RDS(ON) (Typ 15.7m)@VGS=10V RDS(ON) : 15.7m Low Gate Charge (Typ 164nC) Improved dv/dt Capability 100% Avalanche Tested D 1 Application: Synchronous Rectification, 2 3 Li Battery Protect Board , Inverter G 1. Gate 2

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