SWX170R15ET Specs and Replacement
Type Designator: SWX170R15ET
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 193 nS
Cossⓘ - Output Capacitance: 321 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0196 Ohm
Package: TO220
SWX170R15ET substitution
SWX170R15ET datasheet
swx170r15et.pdf
SW170R15ET N-channel Enhanced mode TO-220FB MOSFET Features BVDSS 150V TO-220FB High ruggedness ID 66A Low RDS(ON) (Typ 15.7m )@VGS=10V RDS(ON) 15.7m Low Gate Charge (Typ 164nC) Improved dv/dt Capability 100% Avalanche Tested D 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board , Inverter G 1. Gate 2... See More ⇒
Detailed specifications: SWU6N65K , SWU8N60D , SWU8N65K , SWU8N80K , SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , IRF3710 , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D .
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