All MOSFET. SWX170R15ET Datasheet

 

SWX170R15ET MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWX170R15ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 192 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 66 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 193 nS
   Drain-Source Capacitance (Cd): 321 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0196 Ohm
   Package: TO220

 SWX170R15ET Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWX170R15ET Datasheet (PDF)

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swx170r15et.pdf

SWX170R15ET
SWX170R15ET

SW170R15ET N-channel Enhanced mode TO-220FB MOSFET Features BVDSS : 150V TO-220FB High ruggedness ID : 66A Low RDS(ON) (Typ 15.7m)@VGS=10V RDS(ON) : 15.7m Low Gate Charge (Typ 164nC) Improved dv/dt Capability 100% Avalanche Tested D 1 Application: Synchronous Rectification, 2 3 Li Battery Protect Board , Inverter G 1. Gate 2

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