All MOSFET. SWX170R15ET Datasheet

 

SWX170R15ET Datasheet and Replacement


   Type Designator: SWX170R15ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 193 nS
   Cossⓘ - Output Capacitance: 321 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0196 Ohm
   Package: TO220
 

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SWX170R15ET Datasheet (PDF)

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SWX170R15ET

SW170R15ET N-channel Enhanced mode TO-220FB MOSFET Features BVDSS : 150V TO-220FB High ruggedness ID : 66A Low RDS(ON) (Typ 15.7m)@VGS=10V RDS(ON) : 15.7m Low Gate Charge (Typ 164nC) Improved dv/dt Capability 100% Avalanche Tested D 1 Application: Synchronous Rectification, 2 3 Li Battery Protect Board , Inverter G 1. Gate 2

Datasheet: SWU6N65K , SWU8N60D , SWU8N65K , SWU8N80K , SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , P55NF06 , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D .

History: RU30E30L | MTP2N50 | PMN40UPEA | F15F60C3M | IRFU3706

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