SP8013 Specs and Replacement
Type Designator: SP8013
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 335 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TSON3.3X3.3
SP8013 substitution
SP8013 datasheet
sp8010e.pdf
Green Product SP8010E a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 4.3 @ VGS=10V Suface Mount Package. 24V 26A 4.9 @ VGS=6V ESD Protected. 7.0 @ VGS=4V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3... See More ⇒
Detailed specifications: SP8255 , FDS6984AS , SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 , FDS6994S , 2N7002 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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