All MOSFET. SWY10N65D Datasheet

 

SWY10N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWY10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 41.8 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 43 nS
   Drain-Source Capacitance (Cd): 132 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
   Package: TO220F

 SWY10N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWY10N65D Datasheet (PDF)

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swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf

SWY10N65D
SWY10N65D

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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