SWY10N65D Datasheet. Specs and Replacement

Type Designator: SWY10N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220F

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SWY10N65D datasheet

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SWY10N65D

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒

Detailed specifications: SWU8N65K, SWU8N80K, SWUI7N65D, SWW20N65K, SWWF7N90D, SWX090R15ET, SWX170R15ET, SWX38N65K2F, AON6414A, SWY12N65D, SWY4N60D, SWY640D, SWY7N65D, SWYN4N65DD, SWYN7N65D, SWYS069R10VS, S10H06R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.