All MOSFET. SWY10N65D Datasheet

 

SWY10N65D Datasheet and Replacement


   Type Designator: SWY10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

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SWY10N65D Datasheet (PDF)

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SWY10N65D

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

Datasheet: SWU8N65K , SWU8N80K , SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , IRFB4110 , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R .

History: DMN3015LSD | NTLUD3A260PZ | LSGG04R035 | GSM9435WS | VBZE20P03 | FDMS9408F085 | DMG3N60SCT

Keywords - SWY10N65D MOSFET datasheet

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