SWY10N65D Specs and Replacement
Type Designator: SWY10N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 132 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220F
SWY10N65D substitution
SWY10N65D datasheet
swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf
SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒
Detailed specifications: SWU8N65K , SWU8N80K , SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , AON6414A , SWY12N65D , SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R .
Keywords - SWY10N65D MOSFET specs
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SWY10N65D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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