All MOSFET. SWY4N60D Datasheet

 

SWY4N60D Datasheet and Replacement


   Type Designator: SWY4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220F
 

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SWY4N60D Datasheet (PDF)

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SWY4N60D

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

Datasheet: SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , IRFP250N , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP .

History: STD2N62K3 | 7NM65G-TM3-T | 2SJ243

Keywords - SWY4N60D MOSFET datasheet

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