SWY4N60D PDF and Equivalents Search

 

SWY4N60D Specs and Replacement

Type Designator: SWY4N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220F

SWY4N60D substitution

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SWY4N60D datasheet

 ..1. Size:916K  samwin
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SWY4N60D

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T... See More ⇒

Detailed specifications: SWUI7N65D, SWW20N65K, SWWF7N90D, SWX090R15ET, SWX170R15ET, SWX38N65K2F, SWY10N65D, SWY12N65D, 2N7000, SWY640D, SWY7N65D, SWYN4N65DD, SWYN7N65D, SWYS069R10VS, S10H06R, S10H06RN, S10H06RP

Keywords - SWY4N60D MOSFET specs

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