SWY4N60D PDF and Equivalents Search

 

SWY4N60D Specs and Replacement


   Type Designator: SWY4N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 23.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220F
 

 SWY4N60D substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWY4N60D datasheet

 ..1. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf pdf_icon

SWY4N60D

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T... See More ⇒

Detailed specifications: SWUI7N65D , SWW20N65K , SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , 2N7000 , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP .

History: 2N60F | IRFB3006GPBF | IRFB23N20DPBF | SVT033R5NT | IRFB3077GPBF | IRFB20N50K

Keywords - SWY4N60D MOSFET specs

 SWY4N60D cross reference
 SWY4N60D equivalent finder
 SWY4N60D pdf lookup
 SWY4N60D substitution
 SWY4N60D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.